Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
400 V
Series
D Series
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.65mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.51mm
Typical Gate Charge @ Vgs
9 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
9.01mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
BD 2.668
BD 0.534 Each (In a Pack of 5) (Exc. Vat)
BD 2.935
BD 0.587 Each (In a Pack of 5) (inc. VAT)
Standard
5
BD 2.668
BD 0.534 Each (In a Pack of 5) (Exc. Vat)
BD 2.935
BD 0.587 Each (In a Pack of 5) (inc. VAT)
Standard
5
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 45 | BD 0.534 | BD 2.668 |
| 50 - 245 | BD 0.528 | BD 2.640 |
| 250 - 495 | BD 0.412 | BD 2.062 |
| 500 - 1245 | BD 0.396 | BD 1.980 |
| 1250+ | BD 0.346 | BD 1.732 |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
400 V
Series
D Series
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.65mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.51mm
Typical Gate Charge @ Vgs
9 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
9.01mm
Minimum Operating Temperature
-55 °C
Product details


