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N-Channel MOSFET, 8.7 A, 500 V, 3-Pin TO-220AB Vishay SIHP8N50D-GE3

RS Stock No.: 165-7113Brand: VishayManufacturers Part No.: SIHP8N50D-GE3
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

8.7 A

Maximum Drain Source Voltage

500 V

Series

D Series

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

850 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

156 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

4.65mm

Number of Elements per Chip

1

Transistor Material

Si

Length

10.51mm

Typical Gate Charge @ Vgs

15 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

9.01mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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N-Channel MOSFET, 8.7 A, 500 V, 3-Pin TO-220AB Vishay SIHP8N50D-GE3
P.O.A.Each (Supplied on a Reel) (Exc. Vat)

Stock information temporarily unavailable.

Please check again later.

Stock information temporarily unavailable.

BD 17.000

BD 0.340 Each (In a Tube of 50) (Exc. Vat)

BD 18.700

BD 0.374 Each (In a Tube of 50) (inc. VAT)

N-Channel MOSFET, 8.7 A, 500 V, 3-Pin TO-220AB Vishay SIHP8N50D-GE3

BD 17.000

BD 0.340 Each (In a Tube of 50) (Exc. Vat)

BD 18.700

BD 0.374 Each (In a Tube of 50) (inc. VAT)

N-Channel MOSFET, 8.7 A, 500 V, 3-Pin TO-220AB Vishay SIHP8N50D-GE3
Stock information temporarily unavailable.

Buy in bulk

quantityUnit pricePer Tube
50 - 50BD 0.340BD 17.000
100 - 200BD 0.295BD 14.750
250+BD 0.265BD 13.250

Ideate. Create. Collaborate

JOIN FOR FREE

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
You may be interested in
N-Channel MOSFET, 8.7 A, 500 V, 3-Pin TO-220AB Vishay SIHP8N50D-GE3
P.O.A.Each (Supplied on a Reel) (Exc. Vat)

Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

8.7 A

Maximum Drain Source Voltage

500 V

Series

D Series

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

850 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

156 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

4.65mm

Number of Elements per Chip

1

Transistor Material

Si

Length

10.51mm

Typical Gate Charge @ Vgs

15 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

9.01mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
You may be interested in
N-Channel MOSFET, 8.7 A, 500 V, 3-Pin TO-220AB Vishay SIHP8N50D-GE3
P.O.A.Each (Supplied on a Reel) (Exc. Vat)