Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
8.7 A
Maximum Drain Source Voltage
500 V
Series
D Series
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
850 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
156 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.51mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Width
4.65mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
9.01mm
Product details
N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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BD 2.775
BD 0.555 Each (In a Pack of 5) (Exc. Vat)
BD 3.053
BD 0.611 Each (In a Pack of 5) (inc. VAT)
Standard
5
BD 2.775
BD 0.555 Each (In a Pack of 5) (Exc. Vat)
BD 3.053
BD 0.611 Each (In a Pack of 5) (inc. VAT)
Standard
5
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
5 - 45 | BD 0.555 | BD 2.775 |
50 - 120 | BD 0.505 | BD 2.525 |
125 - 245 | BD 0.460 | BD 2.300 |
250 - 495 | BD 0.440 | BD 2.200 |
500+ | BD 0.415 | BD 2.075 |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
8.7 A
Maximum Drain Source Voltage
500 V
Series
D Series
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
850 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
156 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.51mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Width
4.65mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
9.01mm
Product details