Vishay D Series N-Channel MOSFET, 8.7 A, 500 V, 3-Pin TO-220AB SIHP8N50D-GE3

RS Stock No.: 165-7113Brand: VishayManufacturers Part No.: SIHP8N50D-GE3
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

8.7 A

Maximum Drain Source Voltage

500 V

Series

D Series

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

850 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

156 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Width

4.65mm

Length

10.51mm

Typical Gate Charge @ Vgs

15 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

9.01mm

Product details

N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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N-Channel MOSFET, 8.7 A, 500 V, 3-Pin TO-220AB Vishay SIHP8N50D-GE3
P.O.A.Each (Supplied on a Reel) (Exc. Vat)
Stock information temporarily unavailable.

BD 23.100

BD 0.462 Each (In a Tube of 50) (Exc. Vat)

BD 25.410

BD 0.508 Each (In a Tube of 50) (inc. VAT)

Vishay D Series N-Channel MOSFET, 8.7 A, 500 V, 3-Pin TO-220AB SIHP8N50D-GE3

BD 23.100

BD 0.462 Each (In a Tube of 50) (Exc. Vat)

BD 25.410

BD 0.508 Each (In a Tube of 50) (inc. VAT)

Vishay D Series N-Channel MOSFET, 8.7 A, 500 V, 3-Pin TO-220AB SIHP8N50D-GE3
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

QuantityUnit pricePer Tube
50 - 50BD 0.462BD 23.100
100 - 200BD 0.396BD 19.800
250+BD 0.358BD 17.875

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
You may be interested in
N-Channel MOSFET, 8.7 A, 500 V, 3-Pin TO-220AB Vishay SIHP8N50D-GE3
P.O.A.Each (Supplied on a Reel) (Exc. Vat)

Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

8.7 A

Maximum Drain Source Voltage

500 V

Series

D Series

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

850 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

156 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Width

4.65mm

Length

10.51mm

Typical Gate Charge @ Vgs

15 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

9.01mm

Product details

N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
You may be interested in
N-Channel MOSFET, 8.7 A, 500 V, 3-Pin TO-220AB Vishay SIHP8N50D-GE3
P.O.A.Each (Supplied on a Reel) (Exc. Vat)