Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
24.2 A
Maximum Drain Source Voltage
250 V
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
67 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.26mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
25.3 nC @ 10 V
Length
6.25mm
Minimum Operating Temperature
-55 °C
Height
1.12mm
Forward Diode Voltage
1.1V
Product details
N-Channel MOSFET, TrenchFET up to Gen III, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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Please check again later.
BD 0.750
Each (In a Pack of 5) (Exc. Vat)
BD 0.825
Each (In a Pack of 5) (Including VAT)
5
BD 0.750
Each (In a Pack of 5) (Exc. Vat)
BD 0.825
Each (In a Pack of 5) (Including VAT)
5
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
5 - 45 | BD 0.750 | BD 3.750 |
50 - 120 | BD 0.640 | BD 3.200 |
125 - 245 | BD 0.555 | BD 2.775 |
250 - 495 | BD 0.460 | BD 2.300 |
500+ | BD 0.360 | BD 1.800 |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
24.2 A
Maximum Drain Source Voltage
250 V
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
67 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.26mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
25.3 nC @ 10 V
Length
6.25mm
Minimum Operating Temperature
-55 °C
Height
1.12mm
Forward Diode Voltage
1.1V
Product details