Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
30 V
Package Type
PowerPAK SO-8
Series
TrenchFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
1.15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.25mm
Typical Gate Charge @ Vgs
102 nC @ 10 V
Width
5.26mm
Forward Diode Voltage
1.1V
Minimum Operating Temperature
-55 °C
Height
1.12mm
Product details
N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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Please check again later.
BD 0.635
Each (In a Pack of 5) (Exc. Vat)
BD 0.699
Each (In a Pack of 5) (Including VAT)
5
BD 0.635
Each (In a Pack of 5) (Exc. Vat)
BD 0.699
Each (In a Pack of 5) (Including VAT)
5
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
5 - 45 | BD 0.635 | BD 3.175 |
50 - 120 | BD 0.540 | BD 2.700 |
125 - 245 | BD 0.510 | BD 2.550 |
250 - 495 | BD 0.475 | BD 2.375 |
500+ | BD 0.445 | BD 2.225 |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
30 V
Package Type
PowerPAK SO-8
Series
TrenchFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
1.15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.25mm
Typical Gate Charge @ Vgs
102 nC @ 10 V
Width
5.26mm
Forward Diode Voltage
1.1V
Minimum Operating Temperature
-55 °C
Height
1.12mm
Product details