Dual N-Channel MOSFET, 80 A, 143 A, 30 V, 6-Pin PowerPAIR 3 x 3FDC Vishay SiZF360DT-T1-GE3

RS Stock No.: 200-6872Brand: VishayManufacturers Part No.: SiZF360DT-T1-GE3
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

80 A, 143 A

Maximum Drain Source Voltage

30 V

Package Type

PowerPAIR 3 x 3FDC

Pin Count

6

Maximum Drain Source Resistance

0.0019 Ω, 0.0026 Ω, 0.0045 Ω, 0.0075 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Number of Elements per Chip

2

Series

TrenchFET® Gen IV

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Stock information temporarily unavailable.

BD 19.938

BD 0.798 Each (In a Pack of 25) (Exc. Vat)

BD 21.932

BD 0.878 Each (In a Pack of 25) (inc. VAT)

Dual N-Channel MOSFET, 80 A, 143 A, 30 V, 6-Pin PowerPAIR 3 x 3FDC Vishay SiZF360DT-T1-GE3

BD 19.938

BD 0.798 Each (In a Pack of 25) (Exc. Vat)

BD 21.932

BD 0.878 Each (In a Pack of 25) (inc. VAT)

Dual N-Channel MOSFET, 80 A, 143 A, 30 V, 6-Pin PowerPAIR 3 x 3FDC Vishay SiZF360DT-T1-GE3
Stock information temporarily unavailable.

Stock information temporarily unavailable.

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QuantityUnit pricePer Pack
25 - 75BD 0.798BD 19.938
100 - 475BD 0.726BD 18.150
500 - 975BD 0.666BD 16.638
1000 - 1475BD 0.622BD 15.538
1500+BD 0.588BD 14.712

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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

80 A, 143 A

Maximum Drain Source Voltage

30 V

Package Type

PowerPAIR 3 x 3FDC

Pin Count

6

Maximum Drain Source Resistance

0.0019 Ω, 0.0026 Ω, 0.0045 Ω, 0.0075 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Number of Elements per Chip

2

Series

TrenchFET® Gen IV

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more