Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
12 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
92 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.45V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
3.04mm
Typical Gate Charge @ Vgs
8.4 nC @ 4.5 V
Series
SQ Rugged
Minimum Operating Temperature
-55 °C
Height
1.02mm
Country of Origin
China
Product details
P-Channel MOSFET, SQ Rugged Series, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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BD 0.225
Each (In a Pack of 20) (Exc. Vat)
BD 0.247
Each (In a Pack of 20) (Including VAT)
20
BD 0.225
Each (In a Pack of 20) (Exc. Vat)
BD 0.247
Each (In a Pack of 20) (Including VAT)
20
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
20 - 180 | BD 0.225 | BD 4.500 |
200 - 480 | BD 0.180 | BD 3.600 |
500 - 980 | BD 0.145 | BD 2.900 |
1000 - 1980 | BD 0.115 | BD 2.300 |
2000+ | BD 0.090 | BD 1.800 |
Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
12 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
92 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.45V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
3.04mm
Typical Gate Charge @ Vgs
8.4 nC @ 4.5 V
Series
SQ Rugged
Minimum Operating Temperature
-55 °C
Height
1.02mm
Country of Origin
China
Product details