Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
40 V
Series
SQ Rugged
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
24 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
7.14 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5mm
Typical Gate Charge @ Vgs
74 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
1.55mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
P-Channel MOSFET, SQ Rugged Series, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
BD 11.110
BD 1.111 Each (In a Pack of 10) (Exc. Vat)
BD 12.221
BD 1.222 Each (In a Pack of 10) (inc. VAT)
Standard
10
BD 11.110
BD 1.111 Each (In a Pack of 10) (Exc. Vat)
BD 12.221
BD 1.222 Each (In a Pack of 10) (inc. VAT)
Standard
10
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
10 - 40 | BD 1.111 | BD 11.110 |
50 - 90 | BD 0.886 | BD 8.855 |
100 - 240 | BD 0.776 | BD 7.755 |
250 - 490 | BD 0.726 | BD 7.260 |
500+ | BD 0.610 | BD 6.105 |
Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
40 V
Series
SQ Rugged
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
24 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
7.14 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5mm
Typical Gate Charge @ Vgs
74 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
1.55mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details