Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
55 A
Maximum Drain Source Voltage
60 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
19 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
3.75 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
76 nC @ 10 V
Width
9.65mm
Height
4.83mm
Minimum Operating Temperature
-55 °C
Product details
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
BD 6.160
BD 1.232 Each (In a Pack of 5) (Exc. Vat)
BD 6.776
BD 1.355 Each (In a Pack of 5) (inc. VAT)
Standard
5
BD 6.160
BD 1.232 Each (In a Pack of 5) (Exc. Vat)
BD 6.776
BD 1.355 Each (In a Pack of 5) (inc. VAT)
Standard
5
Stock information temporarily unavailable.
Please check again later.
Quantity | Unit price | Per Pack |
---|---|---|
5 - 45 | BD 1.232 | BD 6.160 |
50 - 120 | BD 1.056 | BD 5.280 |
125 - 245 | BD 0.984 | BD 4.922 |
250 - 495 | BD 0.940 | BD 4.702 |
500+ | BD 0.764 | BD 3.822 |
Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
55 A
Maximum Drain Source Voltage
60 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
19 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
3.75 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
76 nC @ 10 V
Width
9.65mm
Height
4.83mm
Minimum Operating Temperature
-55 °C
Product details