Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
100 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
4.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
9.65mm
Width
10.41mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Typical Gate Charge @ Vgs
76 nC @ 10 V
Height
4.82mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.5V
Country of Origin
Taiwan, Province Of China
Product details
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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Please check again later.
BD 1.340
Each (In a Pack of 5) (Exc. Vat)
BD 1.474
Each (In a Pack of 5) (Including VAT)
5
BD 1.340
Each (In a Pack of 5) (Exc. Vat)
BD 1.474
Each (In a Pack of 5) (Including VAT)
5
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
5 - 45 | BD 1.340 | BD 6.700 |
50 - 120 | BD 0.990 | BD 4.950 |
125 - 245 | BD 0.895 | BD 4.475 |
250 - 495 | BD 0.800 | BD 4.000 |
500+ | BD 0.740 | BD 3.700 |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
100 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
4.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
9.65mm
Width
10.41mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Typical Gate Charge @ Vgs
76 nC @ 10 V
Height
4.82mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.5V
Country of Origin
Taiwan, Province Of China
Product details