Vishay N-Channel MOSFET, 150 A, 80 V, 3-Pin TO-220AB SUP60020E-GE3

Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
150 A
Maximum Drain Source Voltage
80 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
4.65mm
Length
10.51mm
Typical Gate Charge @ Vgs
151.2 nC @ 10 V
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.5V
Height
9.01mm
BD 47.025
BD 0.940 Each (In a Tube of 50) (Exc. Vat)
BD 51.727
BD 1.034 Each (In a Tube of 50) (inc. VAT)
50
BD 47.025
BD 0.940 Each (In a Tube of 50) (Exc. Vat)
BD 51.727
BD 1.034 Each (In a Tube of 50) (inc. VAT)
50
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Please check again later.
Quantity | Unit price | Per Tube |
---|---|---|
50 - 50 | BD 0.940 | BD 47.025 |
100 - 200 | BD 0.808 | BD 40.425 |
250+ | BD 0.759 | BD 37.950 |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
150 A
Maximum Drain Source Voltage
80 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
4.65mm
Length
10.51mm
Typical Gate Charge @ Vgs
151.2 nC @ 10 V
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.5V
Height
9.01mm