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SiC MOSFET, 1200 V Wolfspeed CAB450M12XM3

RS Stock No.: 192-3386Brand: WolfspeedManufacturers Part No.: CAB450M12XM3
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Technical Document

Specifications

Brand

Wolfspeed

Maximum Drain Source Voltage

1200 V

Maximum Drain Source Resistance

4.6 mΩ

Maximum Gate Threshold Voltage

3.6V

Minimum Gate Threshold Voltage

1.8V

Maximum Power Dissipation

50 mW

Maximum Gate Source Voltage

-4 V, 19 V

Maximum Operating Temperature

+175 °C

Transistor Material

SiC

Length

80mm

Typical Gate Charge @ Vgs

1330 nC @ 4/15V

Width

53mm

Number of Elements per Chip

1

Minimum Operating Temperature

-40 °C

Height

15.75mm

Country of Origin

United States

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BD 493.910

Each (Exc. Vat)

BD 543.301

Each (inc. VAT)

SiC MOSFET, 1200 V Wolfspeed CAB450M12XM3

1

Available in multiples of 1
1BD 493.910
2BD 987.820
3BD 1,481.730
4BD 1,975.640
5BD 2,469.550
6BD 2,963.460
7BD 3,457.370
8BD 3,951.280
9BD 4,445.190
10BD 4,939.100
11BD 5,433.010
12BD 5,926.920
13BD 6,420.830
14BD 6,914.740
15BD 7,408.650

BD 493.910

Each (Exc. Vat)

BD 543.301

Each (inc. VAT)

SiC MOSFET, 1200 V Wolfspeed CAB450M12XM3
Stock information temporarily unavailable.

1

Available in multiples of 1
1BD 493.910
2BD 987.820
3BD 1,481.730
4BD 1,975.640
5BD 2,469.550
6BD 2,963.460
7BD 3,457.370
8BD 3,951.280
9BD 4,445.190
10BD 4,939.100
11BD 5,433.010
12BD 5,926.920
13BD 6,420.830
14BD 6,914.740
15BD 7,408.650

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Wolfspeed

Maximum Drain Source Voltage

1200 V

Maximum Drain Source Resistance

4.6 mΩ

Maximum Gate Threshold Voltage

3.6V

Minimum Gate Threshold Voltage

1.8V

Maximum Power Dissipation

50 mW

Maximum Gate Source Voltage

-4 V, 19 V

Maximum Operating Temperature

+175 °C

Transistor Material

SiC

Length

80mm

Typical Gate Charge @ Vgs

1330 nC @ 4/15V

Width

53mm

Number of Elements per Chip

1

Minimum Operating Temperature

-40 °C

Height

15.75mm

Country of Origin

United States

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more