Technical Document
Specifications
Brand
InfineonMaximum Continuous Collector Current
100 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±30V
Maximum Power Dissipation
652 W
Number of Transistors
1
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
P
Pin Count
4
Switching Speed
60kHz
Transistor Configuration
Single
Dimensions
15.9 x 5.1 x 22.5mm
Minimum Operating Temperature
-40 °C
Gate Capacitance
3269pF
Maximum Operating Temperature
+175 °C
Energy Rating
4.2mJ
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BD 3.500
Each (In a Tube of 30) (Exc. Vat)
BD 3.850
Each (In a Tube of 30) (Including VAT)
30
BD 3.500
Each (In a Tube of 30) (Exc. Vat)
BD 3.850
Each (In a Tube of 30) (Including VAT)
30
Technical Document
Specifications
Brand
InfineonMaximum Continuous Collector Current
100 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±30V
Maximum Power Dissipation
652 W
Number of Transistors
1
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
P
Pin Count
4
Switching Speed
60kHz
Transistor Configuration
Single
Dimensions
15.9 x 5.1 x 22.5mm
Minimum Operating Temperature
-40 °C
Gate Capacitance
3269pF
Maximum Operating Temperature
+175 °C
Energy Rating
4.2mJ