Dual SiC N-Channel MOSFET, 187 A, 60 V, 3-Pin PG-TO263-3 Infineon IPB018N06NF2SATMA1
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
187 A
Maximum Drain Source Voltage
60 V
Package Type
PG-TO263-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
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BD 0.860
Each (In a Pack of 5) (Exc. Vat)
BD 0.946
Each (In a Pack of 5) (Including VAT)
Standard
5
BD 0.860
Each (In a Pack of 5) (Exc. Vat)
BD 0.946
Each (In a Pack of 5) (Including VAT)
Standard
5
Buy in bulk
| quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 20 | BD 0.860 | BD 4.300 |
| 25 - 45 | BD 0.775 | BD 3.875 |
| 50 - 120 | BD 0.725 | BD 3.625 |
| 125 - 245 | BD 0.670 | BD 3.350 |
| 250+ | BD 0.620 | BD 3.100 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
187 A
Maximum Drain Source Voltage
60 V
Package Type
PG-TO263-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products