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Infineon Dual SiC N-Channel MOSFET, 143 A, 40 V, 3-Pin PG-TO252-3 IPD023N04NF2SATMA1

RS Stock No.: 262-5861Brand: InfineonManufacturers Part No.: IPD023N04NF2SATMA1
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

143 A

Maximum Drain Source Voltage

40 V

Package Type

PG-TO252-3

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

SiC

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Stock information temporarily unavailable.

BD 2.861

BD 0.572 Each (In a Pack of 5) (Exc. Vat)

BD 3.147

BD 0.629 Each (In a Pack of 5) (inc. VAT)

Infineon Dual SiC N-Channel MOSFET, 143 A, 40 V, 3-Pin PG-TO252-3 IPD023N04NF2SATMA1
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

5

Available in multiples of 5
5BD 2.861
10BD 5.722
15BD 8.584
20BD 11.445
25BD 14.306
30BD 17.168
35BD 20.029
40BD 22.890
45BD 25.751
50BD 25.462
55BD 28.009
60BD 30.555
65BD 33.101
70BD 35.648
75BD 38.194

BD 2.861

BD 0.572 Each (In a Pack of 5) (Exc. Vat)

BD 3.147

BD 0.629 Each (In a Pack of 5) (inc. VAT)

Infineon Dual SiC N-Channel MOSFET, 143 A, 40 V, 3-Pin PG-TO252-3 IPD023N04NF2SATMA1
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

5

Available in multiples of 5
5BD 2.861
10BD 5.722
15BD 8.584
20BD 11.445
25BD 14.306
30BD 17.168
35BD 20.029
40BD 22.890
45BD 25.751
50BD 25.462
55BD 28.009
60BD 30.555
65BD 33.101
70BD 35.648
75BD 38.194

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Pack
5 - 45BD 0.572BD 2.861
50 - 120BD 0.509BD 2.546
125 - 245BD 0.478BD 2.389
250 - 495BD 0.446BD 2.231
500+BD 0.236BD 1.181

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

143 A

Maximum Drain Source Voltage

40 V

Package Type

PG-TO252-3

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more