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N-Channel MOSFET, 35 A, 100 V, 3-Pin DPAK Infineon IPD35N10S3L26ATMA1

RS Stock No.: 218-3043PBrand: InfineonManufacturers Part No.: IPD35N10S3L26ATMA1
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

35 A

Maximum Drain Source Voltage

100 V

Series

OptiMOS™-T

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.026 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Number of Elements per Chip

1

Transistor Material

Si

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BD 0.280

Each (Supplied on a Reel) (Exc. Vat)

BD 0.308

Each (Supplied on a Reel) (inc. VAT)

N-Channel MOSFET, 35 A, 100 V, 3-Pin DPAK Infineon IPD35N10S3L26ATMA1
Select packaging type

Production pack (Reel)

Select packaging type

Standard - each

Available in multiples of 15.

Production -

Available in multiples of 15.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

15

Available in multiples of 15
15BD 4.200
30BD 8.400
45BD 12.600
60BD 16.800
75BD 21.000
90BD 25.200
105BD 29.400
120BD 33.600
135BD 37.800
150BD 42.000
165BD 46.200
180BD 50.400
195BD 54.600
210BD 58.800
225BD 63.000

BD 0.280

Each (Supplied on a Reel) (Exc. Vat)

BD 0.308

Each (Supplied on a Reel) (inc. VAT)

N-Channel MOSFET, 35 A, 100 V, 3-Pin DPAK Infineon IPD35N10S3L26ATMA1
Stock information temporarily unavailable.
Select packaging type

Production pack (Reel)

Select packaging type

Standard - each

Available in multiples of 15.

Production -

Available in multiples of 15.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

15

Available in multiples of 15
15BD 4.200
30BD 8.400
45BD 12.600
60BD 16.800
75BD 21.000
90BD 25.200
105BD 29.400
120BD 33.600
135BD 37.800
150BD 42.000
165BD 46.200
180BD 50.400
195BD 54.600
210BD 58.800
225BD 63.000

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

35 A

Maximum Drain Source Voltage

100 V

Series

OptiMOS™-T

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.026 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Number of Elements per Chip

1

Transistor Material

Si

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more