Infineon CoolMOS™ Silicon N-Channel MOSFET, 9 A, 650 V, 3-Pin DPAK IPD60R280CFD7ATMA1

RS Stock No.: 222-4670Brand: InfineonManufacturers Part No.: IPD60R280CFD7ATMA1
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

9 A

Maximum Drain Source Voltage

650 V

Series

CoolMOS™

Package Type

TO-252

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.28 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Number of Elements per Chip

1

Transistor Material

Silicon

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BD 1,003.750

BD 0.402 Each (On a Reel of 2500) (Exc. Vat)

BD 1,104.125

BD 0.442 Each (On a Reel of 2500) (inc. VAT)

Infineon CoolMOS™ Silicon N-Channel MOSFET, 9 A, 650 V, 3-Pin DPAK IPD60R280CFD7ATMA1

2500

Available in multiples of 2500
2500BD 1,003.750
5000BD 2,007.500
7500BD 3,011.250
10000BD 4,015.000
12500BD 5,018.750
15000BD 6,022.500
17500BD 7,026.250
20000BD 8,030.000
22500BD 9,033.750
25000BD 10,037.500
27500BD 11,041.250
30000BD 12,045.000
32500BD 13,048.750
35000BD 14,052.500
37500BD 15,056.250

BD 1,003.750

BD 0.402 Each (On a Reel of 2500) (Exc. Vat)

BD 1,104.125

BD 0.442 Each (On a Reel of 2500) (inc. VAT)

Infineon CoolMOS™ Silicon N-Channel MOSFET, 9 A, 650 V, 3-Pin DPAK IPD60R280CFD7ATMA1

Stock information temporarily unavailable.

2500

Available in multiples of 2500
2500BD 1,003.750
5000BD 2,007.500
7500BD 3,011.250
10000BD 4,015.000
12500BD 5,018.750
15000BD 6,022.500
17500BD 7,026.250
20000BD 8,030.000
22500BD 9,033.750
25000BD 10,037.500
27500BD 11,041.250
30000BD 12,045.000
32500BD 13,048.750
35000BD 14,052.500
37500BD 15,056.250

Stock information temporarily unavailable.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

9 A

Maximum Drain Source Voltage

650 V

Series

CoolMOS™

Package Type

TO-252

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.28 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Number of Elements per Chip

1

Transistor Material

Silicon

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more