Technical Document
Specifications
Brand
InfineonChannel Type
N, P
Maximum Continuous Drain Current
3.4 A, 4.7 A
Maximum Drain Source Voltage
55 V
Package Type
SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
0.065 Ω, 0.17 Ω
Channel Mode
Depletion
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2 W
Maximum Gate Source Voltage
20 V
Width
4mm
Typical Gate Charge @ Vgs
2.3 nC @ 10 V, 24 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5mm
Height
1.5mm
Series
IRF7343PbF
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Stock information temporarily unavailable.
Please check again later.
BD 0.375
Each (In a Pack of 10) (Exc. Vat)
BD 0.413
Each (In a Pack of 10) (Including VAT)
10
BD 0.375
Each (In a Pack of 10) (Exc. Vat)
BD 0.413
Each (In a Pack of 10) (Including VAT)
10
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
10 - 40 | BD 0.375 | BD 3.750 |
50 - 90 | BD 0.290 | BD 2.900 |
100 - 240 | BD 0.275 | BD 2.750 |
250 - 490 | BD 0.255 | BD 2.550 |
500+ | BD 0.235 | BD 2.350 |
Technical Document
Specifications
Brand
InfineonChannel Type
N, P
Maximum Continuous Drain Current
3.4 A, 4.7 A
Maximum Drain Source Voltage
55 V
Package Type
SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
0.065 Ω, 0.17 Ω
Channel Mode
Depletion
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2 W
Maximum Gate Source Voltage
20 V
Width
4mm
Typical Gate Charge @ Vgs
2.3 nC @ 10 V, 24 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5mm
Height
1.5mm
Series
IRF7343PbF
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V