Technical Document
Specifications
Brand
MagnaChipChannel Type
N
Maximum Continuous Drain Current
12.8 A
Maximum Drain Source Voltage
100 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
110 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
36.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.73mm
Typical Gate Charge @ Vgs
8.8 nC @ 10 V
Width
6.22mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
2.39mm
Country of Origin
China
Product details
Low Voltage (LV) MOSFET
These low voltage (LV) MOSFET provide low on-state resistance and fast switching performance.
MOSFET Transistors, MagnaChip
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BD 0.175
Each (On a Reel of 25) (Exc. Vat)
BD 0.193
Each (On a Reel of 25) (Including VAT)
25
BD 0.175
Each (On a Reel of 25) (Exc. Vat)
BD 0.193
Each (On a Reel of 25) (Including VAT)
25
Buy in bulk
quantity | Unit price | Per Reel |
---|---|---|
25 - 100 | BD 0.175 | BD 4.375 |
125 - 475 | BD 0.135 | BD 3.375 |
500 - 1225 | BD 0.120 | BD 3.000 |
1250+ | BD 0.110 | BD 2.750 |
Technical Document
Specifications
Brand
MagnaChipChannel Type
N
Maximum Continuous Drain Current
12.8 A
Maximum Drain Source Voltage
100 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
110 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
36.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.73mm
Typical Gate Charge @ Vgs
8.8 nC @ 10 V
Width
6.22mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
2.39mm
Country of Origin
China
Product details
Low Voltage (LV) MOSFET
These low voltage (LV) MOSFET provide low on-state resistance and fast switching performance.