Technical Document
Specifications
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
300 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
830 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Maximum Operating Temperature
+150 °C
Length
3mm
Number of Elements per Chip
1
Width
1.4mm
Transistor Material
Si
Minimum Operating Temperature
-65 °C
Height
1mm
Country of Origin
China
Product details
N-Channel MOSFET, 60V to 80V, Nexperia
MOSFET Transistors, NXP Semiconductors
Stock information temporarily unavailable.
Please check again later.
BD 0.025
Each (On a Reel of 3000) (Exc. Vat)
BD 0.027
Each (On a Reel of 3000) (Including VAT)
3000
BD 0.025
Each (On a Reel of 3000) (Exc. Vat)
BD 0.027
Each (On a Reel of 3000) (Including VAT)
3000
Buy in bulk
quantity | Unit price | Per Reel |
---|---|---|
3000 - 3000 | BD 0.025 | BD 75.000 |
6000 - 12000 | BD 0.025 | BD 75.000 |
15000 - 27000 | BD 0.025 | BD 75.000 |
30000 - 57000 | BD 0.020 | BD 60.000 |
60000+ | BD 0.020 | BD 60.000 |
Technical Document
Specifications
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
300 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
830 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Maximum Operating Temperature
+150 °C
Length
3mm
Number of Elements per Chip
1
Width
1.4mm
Transistor Material
Si
Minimum Operating Temperature
-65 °C
Height
1mm
Country of Origin
China
Product details