Technical Document
Specifications
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
650 V
Package Type
TO-220F
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
33 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Width
4.6mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.3mm
Typical Gate Charge @ Vgs
33 nC @ 10 V
Height
15.7mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Country of Origin
China
Stock information temporarily unavailable.
Please check again later.
BD 0.845
Each (In a Tube of 50) (Exc. Vat)
BD 0.929
Each (In a Tube of 50) (Including VAT)
50
BD 0.845
Each (In a Tube of 50) (Exc. Vat)
BD 0.929
Each (In a Tube of 50) (Including VAT)
50
Buy in bulk
quantity | Unit price | Per Tube |
---|---|---|
50 - 50 | BD 0.845 | BD 42.250 |
100 - 200 | BD 0.655 | BD 32.750 |
250 - 450 | BD 0.640 | BD 32.000 |
500 - 950 | BD 0.555 | BD 27.750 |
1000+ | BD 0.470 | BD 23.500 |
Technical Document
Specifications
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
650 V
Package Type
TO-220F
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
33 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Width
4.6mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.3mm
Typical Gate Charge @ Vgs
33 nC @ 10 V
Height
15.7mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Country of Origin
China