Technical Document
Specifications
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
0.6 to 1.5mA
Maximum Drain Source Voltage
30 V
Maximum Drain Gate Voltage
-30V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
200 Ω
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Dimensions
2.9 x 1.5 x 1.1mm
Maximum Operating Temperature
+150 °C
Length
2.9mm
Height
1.1mm
Width
1.5mm
Product details
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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BD 0.090
Each (In a Pack of 100) (Exc. Vat)
BD 0.099
Each (In a Pack of 100) (Including VAT)
100
BD 0.090
Each (In a Pack of 100) (Exc. Vat)
BD 0.099
Each (In a Pack of 100) (Including VAT)
100
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
100 - 100 | BD 0.090 | BD 9.000 |
200 - 400 | BD 0.075 | BD 7.500 |
500 - 900 | BD 0.070 | BD 7.000 |
1000 - 1900 | BD 0.065 | BD 6.500 |
2000+ | BD 0.060 | BD 6.000 |
Technical Document
Specifications
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
0.6 to 1.5mA
Maximum Drain Source Voltage
30 V
Maximum Drain Gate Voltage
-30V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
200 Ω
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Dimensions
2.9 x 1.5 x 1.1mm
Maximum Operating Temperature
+150 °C
Length
2.9mm
Height
1.1mm
Width
1.5mm
Product details
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.