Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum Collector Emitter Voltage
100 V
Package Type
TO-92
Mounting Type
Through Hole
Maximum Power Dissipation
830 mW
Transistor Configuration
Single
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Configuration
Single
Dimensions
5.2 x 4.19 x 5.33mm
Maximum Operating Temperature
+150 °C
Height
5.33mm
Country of Origin
China
Stock information temporarily unavailable.
Please check again later.
BD 0.125
Each (In a Pack of 25) (Exc. Vat)
BD 0.137
Each (In a Pack of 25) (inc. VAT)
Standard
25
BD 0.125
Each (In a Pack of 25) (Exc. Vat)
BD 0.137
Each (In a Pack of 25) (inc. VAT)
Standard
25
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
25 - 75 | BD 0.125 | BD 3.125 |
100 - 225 | BD 0.110 | BD 2.750 |
250 - 475 | BD 0.100 | BD 2.500 |
500 - 975 | BD 0.090 | BD 2.250 |
1000+ | BD 0.080 | BD 2.000 |
Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum Collector Emitter Voltage
100 V
Package Type
TO-92
Mounting Type
Through Hole
Maximum Power Dissipation
830 mW
Transistor Configuration
Single
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Configuration
Single
Dimensions
5.2 x 4.19 x 5.33mm
Maximum Operating Temperature
+150 °C
Height
5.33mm
Country of Origin
China