Technical Document
Specifications
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
130 mA
Maximum Drain Source Voltage
50 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
10 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
225 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.9mm
Width
1.3mm
Minimum Operating Temperature
-55 °C
Height
0.94mm
Product details
P-Channel Power MOSFET, 30V to 500V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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Please check again later.
BD 0.040
Each (In a Pack of 100) (Exc. Vat)
BD 0.044
Each (In a Pack of 100) (Including VAT)
100
BD 0.040
Each (In a Pack of 100) (Exc. Vat)
BD 0.044
Each (In a Pack of 100) (Including VAT)
100
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
100 - 100 | BD 0.040 | BD 4.000 |
200 - 400 | BD 0.040 | BD 4.000 |
500 - 900 | BD 0.035 | BD 3.500 |
1000 - 1900 | BD 0.025 | BD 2.500 |
2000+ | BD 0.025 | BD 2.500 |
Technical Document
Specifications
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
130 mA
Maximum Drain Source Voltage
50 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
10 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
225 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.9mm
Width
1.3mm
Minimum Operating Temperature
-55 °C
Height
0.94mm
Product details