Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
57 A
Maximum Drain Source Voltage
100 V
Package Type
PQFN8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
8.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
54 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
3.4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.4mm
Typical Gate Charge @ Vgs
21 nC @ 10 V
Height
0.75mm
Series
PowerTrench
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Product details
N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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Please check again later.
BD 0.440
Each (On a Reel of 3000) (Exc. Vat)
BD 0.484
Each (On a Reel of 3000) (Including VAT)
3000
BD 0.440
Each (On a Reel of 3000) (Exc. Vat)
BD 0.484
Each (On a Reel of 3000) (Including VAT)
3000
Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
57 A
Maximum Drain Source Voltage
100 V
Package Type
PQFN8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
8.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
54 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
3.4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.4mm
Typical Gate Charge @ Vgs
21 nC @ 10 V
Height
0.75mm
Series
PowerTrench
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Product details