Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
57 A
Maximum Drain Source Voltage
100 V
Package Type
PQFN8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
8.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
54 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Typical Gate Charge @ Vgs
21 nC @ 10 V
Width
3.4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.4mm
Height
0.75mm
Series
PowerTrench
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Product details
N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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Please check again later.
BD 0.680
Each (In a Pack of 10) (Exc. Vat)
BD 0.748
Each (In a Pack of 10) (Including VAT)
10
BD 0.680
Each (In a Pack of 10) (Exc. Vat)
BD 0.748
Each (In a Pack of 10) (Including VAT)
10
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
10 - 90 | BD 0.680 | BD 6.800 |
100 - 490 | BD 0.670 | BD 6.700 |
500 - 990 | BD 0.660 | BD 6.600 |
1000 - 2990 | BD 0.655 | BD 6.550 |
3000+ | BD 0.650 | BD 6.500 |
Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
57 A
Maximum Drain Source Voltage
100 V
Package Type
PQFN8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
8.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
54 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Typical Gate Charge @ Vgs
21 nC @ 10 V
Width
3.4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.4mm
Height
0.75mm
Series
PowerTrench
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Product details