Technical Document
Specifications
Brand
onsemiMaximum Continuous Collector Current
80 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
115 W
Package Type
TO-3PF
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
15.7 x 3.2 x 26.7mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+175 °C
Product details
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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BD 1.855
Each (In a Tube of 30) (Exc. Vat)
BD 2.041
Each (In a Tube of 30) (Including VAT)
30
BD 1.855
Each (In a Tube of 30) (Exc. Vat)
BD 2.041
Each (In a Tube of 30) (Including VAT)
30
Buy in bulk
quantity | Unit price | Per Tube |
---|---|---|
30 - 30 | BD 1.855 | BD 55.650 |
60+ | BD 1.760 | BD 52.800 |
Technical Document
Specifications
Brand
onsemiMaximum Continuous Collector Current
80 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
115 W
Package Type
TO-3PF
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
15.7 x 3.2 x 26.7mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+175 °C
Product details
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.