Technical Document
Specifications
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
12 to 30mA
Maximum Drain Source Voltage
25 V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Source Gate On-Capacitance
5pF
Dimensions
3.04 x 1.4 x 1.01mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
3.04mm
Height
1.01mm
Width
1.4mm
Product details
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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BD 0.100
Each (Supplied on a Reel) (Exc. Vat)
BD 0.110
Each (Supplied on a Reel) (Including VAT)
Production pack (Reel)
10
BD 0.100
Each (Supplied on a Reel) (Exc. Vat)
BD 0.110
Each (Supplied on a Reel) (Including VAT)
Production pack (Reel)
10
Buy in bulk
quantity | Unit price | Per Reel |
---|---|---|
10 - 90 | BD 0.100 | BD 1.000 |
100 - 240 | BD 0.045 | BD 0.450 |
250 - 490 | BD 0.045 | BD 0.450 |
500 - 990 | BD 0.045 | BD 0.450 |
1000+ | BD 0.045 | BD 0.450 |
Technical Document
Specifications
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
12 to 30mA
Maximum Drain Source Voltage
25 V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Source Gate On-Capacitance
5pF
Dimensions
3.04 x 1.4 x 1.01mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
3.04mm
Height
1.01mm
Width
1.4mm
Product details
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.