Dual P-Channel MOSFET, 4.1 A, 20 V, 8-Pin ChipFET onsemi NTHD4102PT1G
Technical Document
Specifications
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
4.1 A
Maximum Drain Source Voltage
20 V
Package Type
ChipFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
170 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
2.1 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-8 V, +8 V
Width
1.7mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
3.1mm
Typical Gate Charge @ Vgs
7.6 nC @ 4.5 V
Height
1.1mm
Minimum Operating Temperature
-55 °C
Country of Origin
Malaysia
Product details
Dual P-Channel MOSFET, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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BD 0.185
Each (On a Reel of 3000) (Exc. Vat)
BD 0.203
Each (On a Reel of 3000) (inc. VAT)
3000
BD 0.185
Each (On a Reel of 3000) (Exc. Vat)
BD 0.203
Each (On a Reel of 3000) (inc. VAT)
3000
Ideate. Create. Collaborate
JOIN FOR FREE
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Technical Document
Specifications
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
4.1 A
Maximum Drain Source Voltage
20 V
Package Type
ChipFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
170 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
2.1 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-8 V, +8 V
Width
1.7mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
3.1mm
Typical Gate Charge @ Vgs
7.6 nC @ 4.5 V
Height
1.1mm
Minimum Operating Temperature
-55 °C
Country of Origin
Malaysia
Product details
Dual P-Channel MOSFET, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products