Technical Document
Specifications
Brand
onsemiTransistor Type
PNP
Maximum Continuous Collector Current
2 (Continuous) A, 4 (Peak) A
Maximum Collector Emitter Voltage
100 V dc
Maximum Emitter Base Voltage
5 V dc
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Transistor Configuration
Single
Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
500
Maximum Collector Base Voltage
100 V dc
Maximum Collector Emitter Saturation Voltage
2.5 V dc
Maximum Collector Cut-off Current
2mA
Width
4.83mm
Maximum Power Dissipation
50 W
Minimum Operating Temperature
-65 °C
Dimensions
10.53 x 4.83 x 15.75mm
Maximum Operating Temperature
+150 °C
Length
10.53mm
Base Current
50mA
Height
15.75mm
Country of Origin
China
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BD 0.225
Each (In a Tube of 50) (Exc. Vat)
BD 0.247
Each (In a Tube of 50) (inc. VAT)
50
BD 0.225
Each (In a Tube of 50) (Exc. Vat)
BD 0.247
Each (In a Tube of 50) (inc. VAT)
50
Buy in bulk
quantity | Unit price | Per Tube |
---|---|---|
50 - 50 | BD 0.225 | BD 11.250 |
100 - 450 | BD 0.165 | BD 8.250 |
500 - 950 | BD 0.145 | BD 7.250 |
1000 - 2450 | BD 0.145 | BD 7.250 |
2500+ | BD 0.145 | BD 7.250 |
Technical Document
Specifications
Brand
onsemiTransistor Type
PNP
Maximum Continuous Collector Current
2 (Continuous) A, 4 (Peak) A
Maximum Collector Emitter Voltage
100 V dc
Maximum Emitter Base Voltage
5 V dc
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Transistor Configuration
Single
Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
500
Maximum Collector Base Voltage
100 V dc
Maximum Collector Emitter Saturation Voltage
2.5 V dc
Maximum Collector Cut-off Current
2mA
Width
4.83mm
Maximum Power Dissipation
50 W
Minimum Operating Temperature
-65 °C
Dimensions
10.53 x 4.83 x 15.75mm
Maximum Operating Temperature
+150 °C
Length
10.53mm
Base Current
50mA
Height
15.75mm
Country of Origin
China