Technical Document
Specifications
Brand
onsemiTransistor Type
PNP
Maximum Continuous Collector Current
10 (Peak) A, 6 (Continuous) A
Maximum Collector Emitter Voltage
100 V dc
Maximum Emitter Base Voltage
5 V dc
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Transistor Configuration
Single
Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
15
Maximum Collector Base Voltage
100 V dc
Maximum Collector Emitter Saturation Voltage
1.5 V dc
Maximum Collector Cut-off Current
400µA
Maximum Operating Temperature
+150 °C
Length
10.53mm
Base Current
2A
Dimensions
10.53 x 4.83 x 15.75mm
Height
15.75mm
Width
4.83mm
Maximum Power Dissipation
65 W
Minimum Operating Temperature
-65 °C
Country of Origin
China
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BD 14.750
BD 0.295 Each (In a Tube of 50) (Exc. Vat)
BD 16.225
BD 0.325 Each (In a Tube of 50) (inc. VAT)
50
BD 14.750
BD 0.295 Each (In a Tube of 50) (Exc. Vat)
BD 16.225
BD 0.325 Each (In a Tube of 50) (inc. VAT)
50
Buy in bulk
quantity | Unit price | Per Tube |
---|---|---|
50 - 50 | BD 0.295 | BD 14.750 |
100 - 450 | BD 0.220 | BD 11.000 |
500 - 950 | BD 0.210 | BD 10.500 |
1000+ | BD 0.210 | BD 10.500 |
Technical Document
Specifications
Brand
onsemiTransistor Type
PNP
Maximum Continuous Collector Current
10 (Peak) A, 6 (Continuous) A
Maximum Collector Emitter Voltage
100 V dc
Maximum Emitter Base Voltage
5 V dc
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Transistor Configuration
Single
Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
15
Maximum Collector Base Voltage
100 V dc
Maximum Collector Emitter Saturation Voltage
1.5 V dc
Maximum Collector Cut-off Current
400µA
Maximum Operating Temperature
+150 °C
Length
10.53mm
Base Current
2A
Dimensions
10.53 x 4.83 x 15.75mm
Height
15.75mm
Width
4.83mm
Maximum Power Dissipation
65 W
Minimum Operating Temperature
-65 °C
Country of Origin
China