Technical Document
Specifications
Brand
SemikronMaximum Continuous Collector Current
150 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±15.0V
Number of Transistors
2
Configuration
Half Bridge
Stock information temporarily unavailable.
Please check again later.
Stock information temporarily unavailable.
BD 63.175
Each (Supplied in a Box) (Exc. Vat)
BD 69.493
Each (Supplied in a Box) (Including VAT)
Semikron SKM150GB12F4 Half Bridge IGBT Transistor Module, 150 A 1200 V
Select packaging type
Production pack (Box)
1
BD 63.175
Each (Supplied in a Box) (Exc. Vat)
BD 69.493
Each (Supplied in a Box) (Including VAT)
Semikron SKM150GB12F4 Half Bridge IGBT Transistor Module, 150 A 1200 V
Stock information temporarily unavailable.
Select packaging type
Production pack (Box)
1
Buy in bulk
quantity | Unit price |
---|---|
1 - 1 | BD 63.175 |
2 - 2 | BD 56.860 |
3 - 3 | BD 51.170 |
4 - 4 | BD 46.055 |
5+ | BD 41.630 |
Technical Document
Specifications
Brand
SemikronMaximum Continuous Collector Current
150 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±15.0V
Number of Transistors
2
Configuration
Half Bridge