Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
25 A
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
190 μΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
160 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Typical Gate Charge @ Vgs
35.5 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.4mm
Width
4.6mm
Height
15.75mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.6V
Country of Origin
China
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BD 1.305
Each (In a Tube of 50) (Exc. Vat)
BD 1.435
Each (In a Tube of 50) (Including VAT)
50
BD 1.305
Each (In a Tube of 50) (Exc. Vat)
BD 1.435
Each (In a Tube of 50) (Including VAT)
50
Buy in bulk
quantity | Unit price | Per Tube |
---|---|---|
50 - 50 | BD 1.305 | BD 65.250 |
100 - 200 | BD 1.140 | BD 57.000 |
250 - 450 | BD 1.080 | BD 54.000 |
500 - 950 | BD 0.965 | BD 48.250 |
1000+ | BD 0.900 | BD 45.000 |
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
25 A
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
190 μΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
160 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Typical Gate Charge @ Vgs
35.5 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.4mm
Width
4.6mm
Height
15.75mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.6V
Country of Origin
China