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STMicroelectronics STripFET II N-Channel MOSFET, 60 A, 60 V, 3-Pin TO-220 STP60NF06L

RS Stock No.: 485-7816Brand: STMicroelectronicsManufacturers Part No.: STP60NF06LDistrelec Article No.: 30401340
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

60 V

Series

STripFET II

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

14 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-15 V, +15 V

Typical Gate Charge @ Vgs

35 nC @ 4.5 V

Width

4.6mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.4mm

Maximum Operating Temperature

+175 °C

Height

9.15mm

Minimum Operating Temperature

-65 °C

Product details

N-Channel STripFET™ II, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

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Stock information temporarily unavailable.

BD 3.544

BD 0.709 Each (In a Pack of 5) (Exc. Vat)

BD 3.898

BD 0.780 Each (In a Pack of 5) (inc. VAT)

STMicroelectronics STripFET II N-Channel MOSFET, 60 A, 60 V, 3-Pin TO-220 STP60NF06L
Select packaging type

BD 3.544

BD 0.709 Each (In a Pack of 5) (Exc. Vat)

BD 3.898

BD 0.780 Each (In a Pack of 5) (inc. VAT)

STMicroelectronics STripFET II N-Channel MOSFET, 60 A, 60 V, 3-Pin TO-220 STP60NF06L
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

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quantityUnit pricePer Pack
5 - 5BD 0.709BD 3.544
10 - 20BD 0.604BD 3.019
25 - 95BD 0.598BD 2.992
100 - 495BD 0.494BD 2.468
500+BD 0.425BD 2.126

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

60 V

Series

STripFET II

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

14 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-15 V, +15 V

Typical Gate Charge @ Vgs

35 nC @ 4.5 V

Width

4.6mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.4mm

Maximum Operating Temperature

+175 °C

Height

9.15mm

Minimum Operating Temperature

-65 °C

Product details

N-Channel STripFET™ II, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more