Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
100 V
Series
NexFET
Package Type
VSONP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
1.51e+007 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Number of Elements per Chip
1
Transistor Material
Si
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BD 2.250
BD 0.225 Each (In a Pack of 10) (Exc. Vat)
BD 2.475
BD 0.247 Each (In a Pack of 10) (inc. VAT)
Standard
10
BD 2.250
BD 0.225 Each (In a Pack of 10) (Exc. Vat)
BD 2.475
BD 0.247 Each (In a Pack of 10) (inc. VAT)
Standard
10
Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
100 V
Series
NexFET
Package Type
VSONP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
1.51e+007 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Number of Elements per Chip
1
Transistor Material
Si