Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
P
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
20 V
Series
NexFET
Package Type
WSON
Pin Count
6
Maximum Drain Source Resistance
2.39e+006 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.55V
Number of Elements per Chip
1
Transistor Material
Si
BD 4.950
BD 0.198 Each (In a Pack of 25) (Exc. Vat)
BD 5.445
BD 0.218 Each (In a Pack of 25) (inc. VAT)
Standard
25
BD 4.950
BD 0.198 Each (In a Pack of 25) (Exc. Vat)
BD 5.445
BD 0.218 Each (In a Pack of 25) (inc. VAT)
Standard
25
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Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
25 - 25 | BD 0.198 | BD 4.950 |
50 - 75 | BD 0.192 | BD 4.812 |
100 - 225 | BD 0.138 | BD 3.438 |
250 - 975 | BD 0.138 | BD 3.438 |
1000+ | BD 0.104 | BD 2.612 |
Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
P
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
20 V
Series
NexFET
Package Type
WSON
Pin Count
6
Maximum Drain Source Resistance
2.39e+006 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.55V
Number of Elements per Chip
1
Transistor Material
Si