Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
15 A
Maximum Drain Source Voltage
600 V
Package Type
TO-3PN
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
190 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
27 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
40.5mm
Width
4.8mm
Transistor Material
Si
Series
TK
Minimum Operating Temperature
-55 °C
Height
19mm
Country of Origin
Japan
Product details
MOSFET N-Channel, TK2x Series, Toshiba
MOSFET Transistors, Toshiba
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Please check again later.
BD 1.925
Each (Exc. Vat)
BD 2.117
Each (inc. VAT)
1
BD 1.925
Each (Exc. Vat)
BD 2.117
Each (inc. VAT)
1
Buy in bulk
quantity | Unit price |
---|---|
1 - 9 | BD 1.925 |
10 - 19 | BD 1.450 |
20+ | BD 1.425 |
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
15 A
Maximum Drain Source Voltage
600 V
Package Type
TO-3PN
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
190 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
27 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
40.5mm
Width
4.8mm
Transistor Material
Si
Series
TK
Minimum Operating Temperature
-55 °C
Height
19mm
Country of Origin
Japan
Product details