Vishay P-Channel MOSFET, 19 A, 100 V, 3-Pin TO-220AB IRF9540PBF

Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
19 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
200 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
61 nC @ 10 V
Width
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Maximum Operating Temperature
+175 °C
Height
9.01mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
BD 4.042
BD 0.808 Each (In a Pack of 5) (Exc. Vat)
BD 4.446
BD 0.889 Each (In a Pack of 5) (inc. VAT)
Standard
5
BD 4.042
BD 0.808 Each (In a Pack of 5) (Exc. Vat)
BD 4.446
BD 0.889 Each (In a Pack of 5) (inc. VAT)
Stock information temporarily unavailable.
Standard
5
Stock information temporarily unavailable.
Quantity | Unit price | Per Pack |
---|---|---|
5 - 45 | BD 0.808 | BD 4.042 |
50 - 120 | BD 0.688 | BD 3.438 |
125 - 245 | BD 0.649 | BD 3.245 |
250 - 495 | BD 0.622 | BD 3.108 |
500+ | BD 0.588 | BD 2.942 |
Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
19 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
200 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
61 nC @ 10 V
Width
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Maximum Operating Temperature
+175 °C
Height
9.01mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details