Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
490 mA
Maximum Drain Source Voltage
400 V
Package Type
HVMDIP
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
1.8 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
6.29mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
5mm
Typical Gate Charge @ Vgs
20 nC @ 10 V
Height
3.37mm
Minimum Operating Temperature
-55 °C
Country of Origin
Philippines
Product details
N-Channel MOSFET, 300V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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Please check again later.
BD 0.465
Each (In a Tube of 100) (Exc. Vat)
BD 0.511
Each (In a Tube of 100) (Including VAT)
100
BD 0.465
Each (In a Tube of 100) (Exc. Vat)
BD 0.511
Each (In a Tube of 100) (Including VAT)
100
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
490 mA
Maximum Drain Source Voltage
400 V
Package Type
HVMDIP
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
1.8 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
6.29mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
5mm
Typical Gate Charge @ Vgs
20 nC @ 10 V
Height
3.37mm
Minimum Operating Temperature
-55 °C
Country of Origin
Philippines
Product details