Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
500 V
Series
D Series
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
250 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
278 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
15.87mm
Typical Gate Charge @ Vgs
85 nC @ 10 V
Width
5.31mm
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
20.82mm
Product details
N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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BD 1.765
BD 1.765 Each (Exc. Vat)
BD 1.941
BD 1.941 Each (inc. VAT)
Standard
1
BD 1.765
BD 1.765 Each (Exc. Vat)
BD 1.941
BD 1.941 Each (inc. VAT)
Standard
1
Buy in bulk
quantity | Unit price |
---|---|
1 - 9 | BD 1.765 |
10 - 49 | BD 1.745 |
50 - 99 | BD 1.720 |
100 - 249 | BD 1.675 |
250+ | BD 1.625 |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
500 V
Series
D Series
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
250 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
278 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
15.87mm
Typical Gate Charge @ Vgs
85 nC @ 10 V
Width
5.31mm
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
20.82mm
Product details