Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
14 A
Maximum Drain Source Voltage
250 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
68 nC @ 10 V
Width
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Maximum Operating Temperature
+150 °C
Height
9.01mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
BD 0.946
BD 0.946 Each (Exc. Vat)
BD 1.041
BD 1.041 Each (inc. VAT)
Standard
1
BD 0.946
BD 0.946 Each (Exc. Vat)
BD 1.041
BD 1.041 Each (inc. VAT)
Standard
1
Stock information temporarily unavailable.
Please check again later.
Quantity | Unit price |
---|---|
1 - 9 | BD 0.946 |
10 - 49 | BD 0.803 |
50 - 99 | BD 0.764 |
100 - 249 | BD 0.715 |
250+ | BD 0.671 |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
14 A
Maximum Drain Source Voltage
250 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
68 nC @ 10 V
Width
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Maximum Operating Temperature
+150 °C
Height
9.01mm
Minimum Operating Temperature
-55 °C
Product details