Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
8 A
Maximum Collector Emitter Voltage
150 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
2 W
Minimum DC Current Gain
40
Transistor Configuration
Single
Maximum Collector Base Voltage
150 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
30 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
9.24 x 10.63 x 4.9mm
Maximum Operating Temperature
+150 °C
Product details
NPN Power Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard.
BD 0.908
BD 0.908 Each (Exc. Vat)
BD 0.999
BD 0.999 Each (inc. VAT)
1
BD 0.908
BD 0.908 Each (Exc. Vat)
BD 0.999
BD 0.999 Each (inc. VAT)
1
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| Quantity | Unit price |
|---|---|
| 1 - 9 | BD 0.908 |
| 10+ | BD 0.803 |
Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
8 A
Maximum Collector Emitter Voltage
150 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
2 W
Minimum DC Current Gain
40
Transistor Configuration
Single
Maximum Collector Base Voltage
150 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
30 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
9.24 x 10.63 x 4.9mm
Maximum Operating Temperature
+150 °C
Product details
NPN Power Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard.



