Technical Document
Specifications
Brand
ToshibaTransistor Type
PNP
Maximum DC Collector Current
-15 A
Maximum Collector Emitter Voltage
-230 V
Package Type
TO-3PL
Mounting Type
Through Hole
Maximum Power Dissipation
150 W
Minimum DC Current Gain
55
Transistor Configuration
Single
Maximum Collector Base Voltage
-230 V
Maximum Emitter Base Voltage
-5 V
Maximum Operating Frequency
30 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
20.5 x 5.2 x 26mm
Maximum Operating Temperature
+150 °C
Country of Origin
Japan
Product details
PNP Power Transistors, Toshiba
Bipolar Transistors, Toshiba
BD 1.364
BD 1.364 Each (Exc. Vat)
BD 1.500
BD 1.500 Each (inc. VAT)
Standard
1
BD 1.364
BD 1.364 Each (Exc. Vat)
BD 1.500
BD 1.500 Each (inc. VAT)
Standard
1
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price |
|---|---|
| 1 - 24 | BD 1.364 |
| 25 - 99 | BD 1.062 |
| 100 - 249 | BD 1.045 |
| 250 - 499 | BD 1.040 |
| 500+ | BD 1.028 |
Technical Document
Specifications
Brand
ToshibaTransistor Type
PNP
Maximum DC Collector Current
-15 A
Maximum Collector Emitter Voltage
-230 V
Package Type
TO-3PL
Mounting Type
Through Hole
Maximum Power Dissipation
150 W
Minimum DC Current Gain
55
Transistor Configuration
Single
Maximum Collector Base Voltage
-230 V
Maximum Emitter Base Voltage
-5 V
Maximum Operating Frequency
30 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
20.5 x 5.2 x 26mm
Maximum Operating Temperature
+150 °C
Country of Origin
Japan
Product details


