Technical Document
Specifications
Brand
ToshibaTransistor Type
PNP
Maximum DC Collector Current
-15 A
Maximum Collector Emitter Voltage
-230 V
Package Type
TO-3P
Mounting Type
Through Hole
Maximum Power Dissipation
150 W
Minimum DC Current Gain
55
Transistor Configuration
Single
Maximum Collector Base Voltage
-230 V
Maximum Emitter Base Voltage
-5 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
15.5 x 4.5 x 20mm
Maximum Operating Temperature
+150 °C
Country of Origin
China
Product details
PNP Power Transistors, Toshiba
Bipolar Transistors, Toshiba
BD 5.472
BD 1.094 Each (In a Pack of 5) (Exc. Vat)
BD 6.019
BD 1.203 Each (In a Pack of 5) (inc. VAT)
5
BD 5.472
BD 1.094 Each (In a Pack of 5) (Exc. Vat)
BD 6.019
BD 1.203 Each (In a Pack of 5) (inc. VAT)
5
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 20 | BD 1.094 | BD 5.472 |
| 25 - 45 | BD 0.842 | BD 4.208 |
| 50 - 95 | BD 0.803 | BD 4.015 |
| 100 - 245 | BD 0.798 | BD 3.988 |
| 250+ | BD 0.798 | BD 3.988 |
Technical Document
Specifications
Brand
ToshibaTransistor Type
PNP
Maximum DC Collector Current
-15 A
Maximum Collector Emitter Voltage
-230 V
Package Type
TO-3P
Mounting Type
Through Hole
Maximum Power Dissipation
150 W
Minimum DC Current Gain
55
Transistor Configuration
Single
Maximum Collector Base Voltage
-230 V
Maximum Emitter Base Voltage
-5 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
15.5 x 4.5 x 20mm
Maximum Operating Temperature
+150 °C
Country of Origin
China
Product details


