Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
15 A
Maximum Drain Source Voltage
500 V
Series
TK
Package Type
TO-3PN
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
270 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
280 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Length
40.5mm
Typical Gate Charge @ Vgs
45 nC @ 10 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Number of Elements per Chip
1
Width
4.8mm
Height
19mm
Minimum Operating Temperature
-55 °C
Country of Origin
Japan
Product details
MOSFET N-Channel, TK2x Series, Toshiba
MOSFET Transistors, Toshiba
BD 1.194
BD 1.194 Each (Exc. Vat)
BD 1.313
BD 1.313 Each (inc. VAT)
1
BD 1.194
BD 1.194 Each (Exc. Vat)
BD 1.313
BD 1.313 Each (inc. VAT)
1
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price |
---|---|
1 - 24 | BD 1.194 |
25 - 99 | BD 0.869 |
100+ | BD 0.858 |
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
15 A
Maximum Drain Source Voltage
500 V
Series
TK
Package Type
TO-3PN
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
270 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
280 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Length
40.5mm
Typical Gate Charge @ Vgs
45 nC @ 10 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Number of Elements per Chip
1
Width
4.8mm
Height
19mm
Minimum Operating Temperature
-55 °C
Country of Origin
Japan
Product details